Why are special precautions necessary in handling FET and CMOS devices?

Field-Effect Transistors (FETs) and Complementary Metal-Oxide Semiconductor (CMOS) devices typically feature incredibly thin insulating layers, such as metal oxide, separating the gate from the conductive channel. Because this layer is microscopic, even a small accumulation of static electricity can create a voltage high enough to puncture the insulation, permanently destroying the component. To prevent this, special handling procedures are required. Technicians use anti-static wrist straps, static-dissipative mats, and store these components in special conductive packaging to ensure electrostatic discharge (ESD) safely dissipates before it can damage the sensitive semiconductor junctions.